江西德義半導體科技有限公司 (JianXi DeYi semiconductor technology Co., Ltd.)提供適用於LED產業應用的2」~4」 GaAs wafer (砷化鎵晶圓)，已成功導入國內外知名LED磊晶廠，另與北京交通大學共建半導體材料先進製程工程技術研究中心(國家級)，提供具有競爭優勢的GaAs wafer。
2」2ﾟ GaAs wafer規格：
|
Parameter |
Specification |
UOM |
|
Conduct Type |
S-C-N |
|
|
Dopant |
GaAs-Si |
|
|
Orientation |
(100)2°Off TowardA±0.5° |
|
|
Orientation Angle |
0° |
|
|
OF Orientation |
EJ(0-1-1)±0.5° |
|
|
OF Length |
17±1 |
mm |
|
IF Orientation |
EJ (0-11)±0.5° |
|
|
IF Length |
7±1 |
mm |
|
Diameter |
50.8±0.3 |
mm |
|
CC |
0.4E18~2.5E18 |
/c.c. |
|
Resistivity |
N/A |
ohm.cm |
|
Mobility |
N/A |
cm2/v.s |
|
EPD |
/cm2 |
|
|
Thickness |
350±20 |
um |
|
TTV |
<10 |
um |
|
TIR |
N/A |
um |
|
Bow |
<10 |
um |
|
Warp |
N/A |
um |
|
Laser Marking |
N/A |
|
|
Surface |
Side1:Polished Side2：Etched |
|
|
ParticleCount |
N/A |
|
|
Packaging |
Cassette |
|
4」15ﾟ GaAs wafer規格(1)：
|
Parameter |
Specification |
UOM |
|
Orientation |
(100)15° Off TowardA±0.5° |
|
|
Orientation Angle |
180° |
|
|
OF Orientation |
EJ[0-1-1]±0.5° |
|
|
OF Length |
32±1 |
mm |
|
IF Orientation |
EJ [0-11]±0.5° |
|
|
IF Length |
18±1 |
mm |
|
Diameter |
100±0.2 |
mm |
|
CC |
0.5E+18~3.0E+18 |
E18/cm3 |
|
Resistivity |
N/A |
ohm cm |
|
Mobility |
≥1000 |
cm2/v.s |
|
EPD |
≤3000 |
/cm2 |
|
Thickness |
350±25 |
um |
|
TTV |
≤10 |
um |
4」15ﾟ GaAs wafer規格(2)：
|
Parameter |
Specification |
UOM |
|
Conduct Type |
S-C-N |
|
|
Dopant |
GaAs-Si |
|
|
Orientation |
(100)15° Off TowardA±0.5° |
|
|
Orientation Angle |
180° |
|
|
OF Orientation |
EJ(0-1-1)±0.5° |
|
|
OF Length |
32±1 |
mm |
|
IF Orientation |
EJ (0-11)±0.5° |
|
|
IF Length |
18±1 |
mm |
|
Diameter |
100±0.2 |
mm |
|
CC |
0.4E18~4.0E18 |
/c.c. |
|
Resistivity |
N/A |
ohm.cm |
|
Mobility |
≥1000 |
cm2/v.s |
|
EPD |
≤5000 |
/cm2 |
|
Thickness |
350±20 |
um |
|
TTV |
<10 |
um |
|
TIR |
N/A |
um |
|
Bow |
N/A |
um |
|
Warp |
N/A |
um |
|
Laser Marking |
NONE |
|
|
Surface |
Side1:Polished Side2：Etched |
|
|
Particle Count |
NONE |
|
|
Packaging |
Single wafer packaging |
|
4」6ﾟ GaAs wafer規格：
|
Parameter |
Specification |
UOM |
|
Conduct Type |
S-C-N |
|
|
Dopant |
GaAs-Si |
|
|
Orientation |
(100)6°±0.5°off towardA |
|
|
Orientation Angle |
1 8 0° |
|
|
OF Orientation |
EJ(0-1-1)±0.5° |
|
|
OF Length |
32±1 |
mm |
|
IF Orientation |
EJ(0-11)±0.5° |
|
|
IF Length |
18±1 |
mm |
|
Diameter |
100±0.2 |
mm |
|
CC |
0.5E18~3.0E18 |
/c.c. |
|
Resistivity |
N/A |
ohm.cm |
|
Mobility |
≥1000 |
cm2/v.s |
|
EPD |
≤3000 |
/cm2 |
|
Thickness |
350±20 |
um |
|
TTV |
<10 |
um |
|
TIR |
N/A |
um |
|
Bow |
N/A |
um |
|
Warp |
N/A |
um |
|
Laser Marking |
NONE |
|
|
Surface |
Side1:Polished Side2：Etched |
|
|
ParticleCount |
NONE |
|
|
Packaging |
Single wafer packaging |
|
 |
+886-3-5283215
+886-3-5283995
sales@emax.com.tw
